Dry Etch

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위・아래 삭제 복제 복제전송
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수정 링크걸기 링크해제
수정 링크걸기 링크해제
수정 링크걸기 링크해제
       
위・아래 삭제 복제 복제전송
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  Dry Etch
       
위・아래 삭제 복제 복제전송 텍스트기본스타일
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•High density plasma etching of amorphous CoZrNb films for thin film magnetic devices
•High Density Plasma Etching of IrRu Thin Films as a New Electrode for FeRAM
•Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HB
•Etch Characteristics of Nickel Oxide Thin Films Using Inductively Coupled Plas
•Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory
•Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar lasma
•Etch characteristics of FePt magnetic thin films using inductively coupled plasma reactive ion etching
•Etch characteristics of gallium indium zinc oxide thin films in a HBr/Ar plasma
•Etch characteristics of indium zinc oxide thin films in a C2F6/Ar plasma
•Etch characteristics of indium zinc oxide thin films using inductively coupled plasma of a Cl2/Ar gas
•Etch characteristics of IrMn thin films using an inductively coupled plasma of CH3OH/Ar
•Evolution of etch profile in etching of CoFeB thin films using high density plasma reactive ion etching
•Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl2/Ar Gas Mix
•Inductively coupled plasma reactive ion etching of titanium thin films using a Cl2/Ar gas
•Investigation on etch characteristics of MgO thin films using a HBr/Ar plasma
•Investigation on Etch Characteristics of Nanometer-Sized Magnetic Tunnel Junction Stacks Using a HBr/Ar Plasma
•Evolution of Etch Profile of Magnetic Tunnel Junction Stacks Etched in a CH3OH/Ar Plasma
•High density plasma reactive ion etching of CoFeB magnetic thin films using a CH4/Ar plasma
•Inductively coupled plasma reactive ion etching of IrMn magnetic thin films using a CH4/O2/Ar gas
•Inductively coupled plasma reactive ion etching of FePt magnetic thin films in a CH4/O2/Ar plasma
•Inductively coupled plasma reactive ion etching of FePt magnetic thin films in a CH4/O2/Ar plasma Junction Stacks Etched in a CH 4/O2/Ar Plasma
•Investigation on etch characteristics of FePt thin films using a H2O/Ar plasma
•Etch characteristics of CoFeB magnetic thin films using high density plasma of a H2O/CH4/Ar gas mixture
•Selective Etching of Magnetic Tunnel Junction Materials Using CO/NH3 Gas Mixture in Radio Frequency Pulse-Biased Inductively Coupled Plasmas